Cyfres MCP Gwrthydd
Derating
Dimensiynau mewn milimetrau
Manylebau trydanol technegol a safonol
Math | Watedd 25°C | Max.kV | Dimensiynau mewn milimetrau (modfeddi) | ||
|
|
| A(±0.50/±0.02) | B(±0.50/±0.02) | C(±0.50/±0.02) |
MCP05 | 0.5 | 3000 | 12.90/0.51 | 3.40/0.13 | 10.20/0.40 |
MCP07 | 0.65 | 4500 | 17.15/0.68 | 3.40/0.13 | 15.24/0.60 |
MCP12 | 1.20 | 5000 | 20.00/0.78 | 5.08/0.20 | 17.78/0.70 |
MCP16 | 1.60 | 8000 | 25.60/1.01 | 5.30/0.21 | 22.90/0.90 |
MCP30 | 3.00 | 9000 | 38.30/1.51 | 6.60/0.26 | 35.50/1.40 |
MCP40 | 4.00 | 11500 | 51.00/2.01 | 6.60/0.26 | 48.20/1.90 |
MCP50 | 5.00 | 16500 | 51.00/2.01 | 12.90/0.51 | 48.20/1.90 |
Manylebau
Ystodau ymwrthedd | 200Ω -1GΩ |
Goddefgarwch Gwrthsafiad | ±0.5% i ± 10% safonol i lawr i ±0.1 % ar gais arbennig am werthoedd ohmig cyfyngedig |
Cyfernod Tymheredd | ≤ 100 MΩ: ±80 ppm / ° C safonol |
> 100 MΩ: ±150 ppm / ° C safonol | |
O -5°C i +105°C wedi'i gyfeirio at +25°C;i lawr i 15ppm/°C ar gais arbennig am werth ohmig cyfyngedig | |
Max.Tymheredd Gweithredu | + 225 °C |
Amgasgliad | gyda phrint silicon arwyneb fel dewis arall rhad |
Deunydd Arweiniol | OFHC tunplat |
Pwysau | yn dibynnu ar fodel rhif.(gofynnwch am fanylion) |
Ar gais arbennig am Foltedd a Maint gwahanol |
Gwybodaeth Archebu
Math | ohmig | TCR | TOL |
MCP40 | 20M | 25PPM | 1% |